Research Website

Educational Qualifications

Ph.D., Chemical Engineering, The University of Texas at Austin
M.S., Electrical Engineering, The University of Maryland

Courses Taught

CHE 323     Chemical Engineering for Microelectronics (undergraduate)
CHE 395C     Chemical Processes for Microelectronics (graduate)
SSC 306     Statistics in Market Analysis (undergraduate)
SSC 380D     Statistical Methods II (graduate)
EE 411     Circuit Theory (undergraduate)
EE 323     Network Theory II (undergraduate)
EE 325     Electromagnetic Engineering (undergraduate)
EE 338     Electronic Circuits I (undergraduate)
EE 339     Solid State Electronics (undergraduate)
EE 383P      Fourier Optics (graduate)
EE 396K/CHE 385C     Semiconductor Microlithography (graduate)
PHY 333/EE 347     Modern Optics (undergraduate)

Research

Micro- and nanolithography, stochastic modeling of semiconductor lithography to predict line-edge roughness

Awards & Honors

SPIE Frits Zernike Award for Microlithography, for contributions in lithography modeling and education, 2009
SEMI Award for North America, for contributions in lithography modeling and education, 2003
Best Paper Award, 18th Annual BACUS Symposium on Photomask Technology and Management, 1998.

Selected Publications

• C. A. Mack, “Stochastic modeling of photoresist development in two and three dimensions”, Journal of Micro/Nanolithography, MEMS, and MOEMS , Vol. 9, No. 4 (Oct-Dec, 2010) p. 041202.
• C. A. Mack, “A Simple Model of Line-Edge Roughness”, Future Fab International, Vol. 34 (July 14, 2010).
• C. A. Mack, “Stochastic Modeling in Lithography:  The Use of Dynamical Scaling in Photoresist Development,” Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, No. 3 (Jul/Aug/Sep 2009) p. 033001.
• C. A. Mack, “Stochastic Modeling in Lithography:  Autocorrelation Behavior of Catalytic Reaction-Diffusion Systems,” Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, No. 2 (Apr/May/Jun 2009) p. 029701.
• C. A. Mack, “Stochastic approach to modeling photoresist development”, Journal of Vacuum Science & Technology, Vol. B27, No. 3 (May/Jun. 2009) pp. 1122-1128.
• C. A. Mack, “Seeing Double”, IEEE Spectrum (Nov. 2008) pp. 46-51.
• C. A. Mack, “The Future of Semiconductor Lithography: After Optical, What Next?”, Future Fab International, Vol. 23 (7/9/2007).
• C. A. Mack, “Charting the Future (and Remembering the Past) of Optical Lithography Simulation,” Journal of Vacuum Science & Technology, Vol. B 23, No. 6 (Nov / Dec 2005) pp. 2601-2606.
• C. A. Mack, K. E. Mueller, A. B. Gardiner, J. P. Sagan, R. R. Dammel, and C. G. Willson “Modeling Solvent Diffusion in Photoresist,” Journal of Vacuum Science & Technology, Vol. B16, No. 6, (Nov., 1998) pp. 3779-3783.
• C. A. Mack and G. Arthur, “Notch Model for Photoresist Dissolution,” Electrochemical and Solid State Letters, Vol. 1, No. 2, (August, 1998) pp. 86-87.
• C. A. Mack, “Trends in Optical Lithography,” Optics and Photonics News (April, 1996) pp. 29-33.
• C. A. Mack, “Lithographic Effects of Acid Diffusion in Chemically Amplified Resists,” Microelectronics Technology: Polymers for Advanced Imaging and Packaging, ACS Symposium Series 614,  E. Reichmanis, C. Ober, S. MacDonald, T. Iwayanagi, and T. Nishikubo, eds., ACS Press (Washington: 1995) pp. 56-68.
• C. A. Mack, “New Kinetic Model for Resist Dissolution,” Journal of the Electrochemical Society, Vol. 139, No. 4 (Apr. 1992) pp. L35-L37.
• D. H. Ziger and C. A. Mack, “Generalized Approach toward Modeling Resist Performance,” AICHE Journal, Vol. 37, No. 12 (Dec 1991) pp. 1863-1874.
• C. A. Mack, “Absorption and Exposure in Positive Photoresist,” Applied Optics, Vol. 27, No. 23 (1 Dec. 1988) pp. 4913-4919.
• C. A. Mack, “Development of Positive Photoresists,” Journal of the Electrochemical Society, Vol. 134, No. 1 (Jan. 1987) pp. 148-152.