PUBLICATIONS AND PATENTS:
Peer Reviewed Journal Articles: (#
indicates corresponding author)
2013
- As updated of Jan 2013 -
130.E. Paek and G.S. Hwang#, “A computational analysis of graphene adhesion on amorphous silica,” , submitted (2012).
129.E. Paek, A.J. Pak, and G.S. Hwang#, “On the origin of the enhanced supercapacitor performance of nitrogen-doped graphene,” , submitted (2012).
128.M. Pan, A.J. Brush, Z.D. Pozun, H.-C. Ham, W.-Y. Yu, G. Henkelman, G.S. Hwang, and C.B. Mullins#, “Model Studies of Heterogeneous Catalytic Hydrogenation Reactions with Gold,”, submitted (2012)
127.J.-G. Cheng, K.E. Kweon, J.A. Alonso, P.P. Kong, Y. Liu, C.-Q. Jin, J.J. Wu, J.F. Lin, S.A. Larregola, W.-G. Yang, G.Y. Shen, A. MacDonald, A. Manthiram, J.B. Goodenough, G.S. Hwang, and J.-S. Zhou#, “A polar perovskite PbRuO3with direct cation-cation bonding stabilized under high pressure,” , submitted (2012).
126.K.E. Kweon and G.S. Hwang#, “Structural phase dependent hole localization and transport in bismuth vanadate,” , submitted (2012).
125.H.-C. Ham, D. Manogaran, K.H. Lee, K. Kwon, S.-A. Jin, D.J. You, C. Pak, and G.S. Hwang#, “Enhanced Oxygen Reduction Reaction and Its Underlying Mechanism in Pd-Ir-Co Trimetallic Alloys,” submitted (2012).
124.C.Y. Chou and G.S. Hwang#, “Surface Effects on the Structure and Li Behavior in Li-Si Alloys: A First Principles Study,” submitted (2012).
123.B. Patrick, H.C. Ham, Y. Shao-Horn, L.F. Allard, G.S. Hwang, and P.J. Ferreira, “Atomic Structure and Composition of 'Pt3Co' Nanocatalyst in Fuel Cells,” Chem. Mater., in press (2013).
122.M. Pan, H.-C. Ham, W.-Y. Yu, G.S. Hwang, and C.B. Mullins#, “Highly Selective, Facile NO2 Reduction to NO at Cryogenic Temperatures on H Pre-Covered Gold,”J. Am. Chem. Soc., 135 (1), 436 (2013).[PDF]
121.E. Paek, A.J. Pak, and G.S. Hwang#, “A computational study of the interfacial structure and capacitance of graphene in [BMIM][PF6] ionic liquid,” J. Electrochem. Soc., 160, A1 (2013). [PDF]
2012
(6)
120.K.E. Kweon and G.S. Hwang#, “Hybrid Density Functional Study of the Structural, Bonding, and Electronic Properties of bismuth vanadate,” Phys. Rev. B, 86, 165209 (2012). [PDF]
119.Y. Lee and G.S. Hwang#, “Mechanism of Thermal Conductivity Suppression in Doped Silicon,” Phys. Rev. B, 86, 075202 (2012). [PDF]
118.K.E. Kweon, G.S. Hwang#, and Y.-H. Kim, “Boron-Vacancy Pairing and Its Effect on the Electronic Properties of Carbon Nanotubes,” ECS Solid State Lett. 1, M19 (2012). [PDF]
117.E.K. Lee, L. Yin, Y. Lee, J.W. Lee, S.J. Lee, J. Lee, S.N. Cha, D. Whang, G.S. Hwang, K. Hippalgaonkar, A. Majumdar, C. Yu, B.Y. Choi, J.M. Kim, and K. Kim, “Large Thermoelectric Figure-of-Merits from SiGe Nanowires by Simultaneously Measuring Electrical and Thermal Transport Properties,“ Nano. Lett. 12, 2918 (2012). [PDF].
116.Y. Lee and G.S. Hwang#, “Force matching-based parametrization of the Stillinger-Weber potential for thermal conduction in silicon,” Phys. Rev. B. 85, 125204 (2012). [PDF]
115.H.-C. Ham, J.A. Stephens, G.S. Hwang#, J. Han, S.W. Nam, and T.H. Lim, “Role of small Pd Ensembles in Boosting CO Oxidation in AuPd Alloys,” J. Phys. Chem. Lett. 3, 566 (2012). [PDF]
2011 (12)
114.J.A. Stephens and G.S. Hwang#, “Atomic arrangements in AuPt/Pt(100) and AuPd/Pd(100) surface alloys: A Monte Carlo study using first principles-based cluster expansion,” J. Phys. Chem. C. 115, 21205 (2011). [PDF]
113.S. Lee and G.S. Hwang#, “Valence force field-based Monte Carlo bond-rotation method for the determination of sp2-bonded carbon structures,” J. Appl. Phys. 110, 093524 (2011). [PDF]
112.C.-Y. Chou, H. Kim, and G.S. Hwang#, “A Comparative First Principles Study of the Structure, Energetics, and Properties of Li-M (M=Si, Ge, Sn) Alloys,” J. Phys. Chem. C. 115, 20018 (2011). [PDF]
111.H.-S. Park, K.E. Kweon, H. Ye, E. Paek, G.S. Hwang, and A. Bard, “Factors in the Metal Doping of BiVO4 for Improved Photoelectrocatalytic Activity as Studied by Scanning Electrochemical Microscopy (SECM) and First-Principles Density-Functional Calculation,”J. Phys. Chem. C. 115, 17870 (2011). [PDF]
110.S. Lee, R.J. Bondi, and G.S. Hwang#, "Ab Initio Parametrized Valence Force Fields for the Structure and Energetics of Amorphous SiOx (0 < x < 2) Materials," Phys. Rev. B. 84, 045202 (2011). [PDF]
109.K.E. Kweon and G.S. Hwang#, "Defect-assisted Covalent Binding of Graphene to An Amorphous Silica Surface, ChemPhysChem. 12, 2155 (2011). [PDF]
108.S. Lee, R.J. Bondi, and G.S. Hwang#, “Atomistic structural description of the Si(001)/a-SiO2 interface: The influence of different Keating-like potential parameters,”J. Appl. Phys. 109, 113519 (2011). [PDF]
107.R.J. Bondi, S. Lee, and G.S. Hwang#, "First-Principles Study of the Structural, Electronic, and Optical Properties of Oxide-Sheathed Silicon Nanowires," ACS Nano 5, 1713 (2011). [PDF]
106.H.-C. Ham, J.A. Stephens, G.S. Hwang#, J. Han, S.W. Nam, and T.H. Lim, "Pd Ensemble Effects on Oxygen Hydrogenation in AuPd Alloys: A Combined Density Functional Theory and Monte Carlo Study, Catalysis Today 165, 138 (2011). [PDF]
105.Y. Lee, S. Lee, and G.S. Hwang#, "Effects of Vacancy Defects on Thermal Conductivity in Crystalline Silicon: A Non-Equilibrium Molecular Dynamics Study," Phys. Rev. B 83, 125202 (2011). [PDF]
104.H.W. Kim, C.-Y. Chou, J.G. Ekerdt, and G.S. Hwang#, "Structure and Properties of LiSi Alloys: A First Principles Study," J. Phys. Chem. C 115, 2514-2521 (2011). [PDF]
103.R.J. Bondi, S. Lee, and G.S. Hwang#, “First-Principles Prediction of Optical Absorption Enhancement for Si Native Defect Clusters Under Biaxial Strain," Electrochem. Solid-State Lett. 14(1), P1-P4 (2011). [PDF]
2010 (10)
102. J.A. Stephens, H.-C. Ham, and G.S. Hwang#, "Atomic Arrangements of AuPd/Pd(111) and AuPt/Pt(111) Surface Alloys: A Combined Density Functional Theory and Monte Carlo Study," J. Phys. Chem. C 114, 21516 (2010). [PDF]
101.K.E. Kweon and G.S. Hwang#, "Formation, Structure, and Bonding of Boron-Vacancy Pairs in Graphene: A First Principles Study," Phys. Rev. B 82, 195439 (2010). [PDF]
100.R.J. Bondi, S. Lee, and G.S. Hwang#, “Role of Structural Disorder in Optical Absorption in Si,” Phys. Rev. B 82, 115214 (2010). [PDF]
99.J.M. Nagarah, E. Paek, Y. Luo, P. Wang, G.S. Hwang, and J.R. Heath#, “Batch Fabrication of High Performance Planar Patch-Clamp Silicon Devices in Quartz,” Advanced Materials 22, 4622 (2010). [PDF]
98. H. Kim. K.E.
Kweon, C.-Y. Chou, J.G. Ekerdt, and G.S. Hwang#, “On
the Nature and Behavior of Li atoms in Si: A First Principles Study," J. Phys.
Chem. C 114, 17942 (2010).
97. H.C. Ham, G.S.
Hwang#, J. Han, S.
W. Nam, and T. H. Lim, “First Principles Prediction of Geometric Parameter
Effects on Ensemble Contributions to Catalysis: H2O2 Formation from H2 and O2 on AuPd Alloys,” J. Phys.
Chem. C 114, 14922 (2010).
96. R.J. Bondi, S. Lee, and G.S. Hwang#, “Strain Effects on the Stability and Structure of Vacancy Clusters in Si: A First-Principles Study,” Phys. Rev. B 81, 245206 (2010). [PDF]
95. R.J. Bondi, S. Lee, and G.S. Hwang#, “First-principles study of the mechanical and optical properties of amorphous hydrogenated silicon and silicon-rich silicon oxide,” Phys. Rev. B 81, 195207 (2010). [PDF]
94. S.H. Lee, J.A. Stephens, and G.S. Hwang#, “On the Nature and Origin of Si Surface Segregation in an Amorphous Au-Si alloy,” J. Phys. Chem. C 114, 3037 (2010). [PDF]
93. J.H. Yu, X.
Liu, K.E. Kweon, J. Joo, J. Park, K.T. Ko, D.W. Lee, J.S. Son, J. Park, Y.-W.
Kim, G.S. Hwang, M. Dobrowolska, J. K. Furdyna#, and T. Hyun#, “Giant Zeeman splitting in nucleation-controlled
doped CdSe:Mn2+ quantum nanoribbons,” Nature Materials 9, 47 (2010).
2009 (10)
92. S. Lee, R.J.
Bondi, and G.S. Hwang#, “Formation and Structure of
Vacancy Defects in Silicon: Combined Metropolis
Monte Carlo, tight-binding molecular dynamics, and density functional theory
calculations,” Phys. Rev. B 80,
245209 (2009).
91. N. Kong#, T.A. Kirichenko, G.S. Hwang, and S.K. Banerjee, “Arsenic-Defect Complexes at SiO2/Si Interfaces: A Density Functional Study,” Phys. Rev. B 80, 205328 (2009). [PDF]
90. S.H. Lee and G.S.
Hwang#, “Diffusion and Clustering of Au Adatoms on
H-terminated Si(111)-(1´1): A First Principles Study ,” J. Chem. Phys. 131, 144702 (2009).
89. M.C.
Kim, G.S. Hwang#, and R.S. Ruoff, “Epoxide Reduction
by Hydrazine on Graphene: A First Principles Study,” J. Chem. Phys. 131,
064704 (2009).
88. H.-C.
Ham, G.S. Hwang#, J. Han, S. W. Nam, and T. H. Lim, “On the Role of Pd Ensembles in
Selective H2O2 Formation on AuPd Alloy Surfaces,” J. Phys. Chem. C – Letter 113, 12943 (2009).
87. R.J.
Bondi, S. Lee, and G.S. Hwang#,
“Theoretical Characterization of Silicon Self-Interstitial Clusters in Uniform
Strain Fields,” Phys.
Rev. B 80, 125202 (2009).
86. S.
Lee, R.J. Bondi and G.S. Hwang#, “Integrated Atomistic
Modeling of the Growth and Structure of Self-interstitial Defects in Silicon,” Molecular
Simulation 35, 867 (2009) - Invited.
85. R.J.
Bondi, S. Lee and G.S. Hwang#, “Prediction of the
Formation of Stable Periodic Self-Interstitial Chains [(I4)m,
m=1-4] in Si under Biaxial Strain,” Appl. Phys. Lett. 94, 264101 (2009).
84. C.-L.
Kuo and G.S. Hwang#, “Structure and Diffusion of Boron
in Amorphous Silica: Role of Oxygen Vacancy Related Defects,” Phys. Rev. B 79, 165201 (2009).
83. R.
J. Bondi, S. Lee, and G.S. Hwang#, “Biaxial Strain
Effects on the Structure and Stability of Self-Interstitial Clusters in
Silicon,” Phys. Rev. B 79, 104106 (2009).
2008 (10)
82. C.-L. Kuo, S. Lee, and G.S.
Hwang#,
“Strain-induced Formation of Surface Defects in Amorphous Silica: A Theoretical
Prediction,” Phys.
Rev. Lett. 100, 76104 (2008).
81. S. Lee and G.S. Hwang#, “Theoretical Determination of Stable Fourfold-Coordinated Vacancy Clusters in Si,” Phys. Rev. B 78, 125310 (2008). [PDF]
80. D. Yu, S. Lee, and G.S. Hwang#, “Structure and dynamics of Ge in the Si/SiO2 system: Implications for oxide-embedded Ge nanoparticle growth,” Electrochem. Solid-State Lett. 11, P17 (2008). [PDF]
79. N. Kong#, T.A. Kirichenko, G.S. Hwang, S.K. Banerjee,
“Interstitial-based Boron Diffusion Dynamics in Amorphous Silicon,” Appl. Phys. Lett. 93, 082109 (2008).
78. C.-L. Kuo, S. Lee, and G.S. Hwang#, “Structure and Dynamics of Silicon-Oxygen Pairs and Their Role in Silicon Self-diffusion in Amorphous Silica,” J. Appl. Phys. 104, 054906 (2008). [PDF]
77. J. Shin, H.-W. Kim, K. Agapiou, R.A. Jones, G.S.
Hwang, J.G. Ekerdt#,
“Effects of P on amorphous chemical vapor deposition Ru-P alloy films for Cu
interconnect linear applications,” J. Vac. Sci. Technol.A26, 974 (2008).
76. S. Lee and G.S. Hwang#, “Growth and Shape Transition of Small Silicon Self-Interstitial Clusters,” Phys. Rev. B 78, 045204 (2008). [PDF]
75. J.A. Kenney, E. Paek, and G.S. Hwang#, “Stochastic Plasma Charging of Nanopatterned Dielectric Surfaces,” IEEE Trans. Plasma Sci., Special Issue: Images in Plasma Science 36, 878 (2008). [PDF]
74. C.-L.
Kuo and G.S. Hwang#,
“On the Origin of Nitrogen-induced Retardation of Boron Diffusion in Amorphous
Silica,” Appl.
Phys. Lett. 92, 92112 (2008).
73. S.
Lee and G.S. Hwang#,
“Structure and stability of small compact self-interstitial clusters in
crystalline silicon,” Phys. Rev. B 77, 85210 (2008).
2007 (6)
72. S.H. Lee and G.S.
Hwang#,
“Structure, energetics and bonding of amorphous Au-Si alloys,” J. Chem. Phys 127, 224710 (2007).
71. D. Yu, S. Lee, and G.S.
Hwang#,
“On the Origin of Si Nanocrystal Formation in a Si Suboxide Matrix,“ J. Appl. Phys. 102, 84309 (2007).
70. J. Shin, H.-W. Kim, G.S.
Hwang,and J.G. Ekerdt#, “Chemical routes to ultra
thin films for copper barriers and liners,“ Surface & Coatings Technol. 201, 9256 (2007).
69. S. Harrison, T. Edgar, and G.S. Hwang#, “Prediction of B-Sii-F Complex Formation and Its Role in B TED Suppression and Deactivation,“ J. Appl. Phys. 101, 66102 (2007). [PDF]
68. J. Kenney and G.S. Hwang#, “Prediction of stochastic behavior in differential charging of nanopatterned dielectric surfaces during plasma processing,” J. Appl. Phys. 101, 44307 (2007). [PDF]
67. J. Shin, A. Waheed,
W.A. Winkenwerder, H.-W. Kim, K. Agapiou, R.A. Jones, G.S. Hwang,and J.G. Ekerdt#, “Chemical Vapor Deposition
of Amorphous Ruthenium-Phosphorus Alloy Films,“ Thin Solid Films. 515, 5298 (2007).
2006 (10)
66. C.-L. Kuo and G.S. Hwang#, “Structure and Interconversion of Oxygen Vacancy Related Defects on Amorphous Silica,“ Phys. Rev. Lett. 97, 66101 (2006). [PDF]
65. D. Pillay, Y. Wang, and G.S. Hwang#, “Prediction of Tetraoxygen
Formation on Rutile TiO2(110),“ J. Am. Chem. Soc. 128, 14000 (2006).
64. J. Shin, A. Waheed, K. Agapiou, W.A. Winkenwerder, H.-W. Kim, R.A. Jones#, G.S. Hwang#, and J.G. Ekerdt#, ”Growth of Ultra-thin Films of Amorphous Ruthenium-Phosphorus Alloys Using a Single Source CVD Precursor,” J. Am. Chem. Soc. 128, 16510 (2006). [PDF]
63. S. Harrison, T. Edgar, and G.S. Hwang#, “Prediction of Anomalous Fluorine-Silicon Interstitial Pair Diffusion in Crystalline Silicon,“ Phys. Rev. B-rapid communication 74, 121201 (2006). [PDF]
62. S. Harrison, T.
Edgar, and G.S. Hwang#, “Interstitial-Mediated
Mechanisms of Arsenic and Phosphorus Diffusion in Silicon,“ Phys. Rev. B 74,
195202 (2006).
61. S. Harrison, T.
Edgar, and G.S. Hwang#, “Interstitial Mediated
Arsenic Clustering in Ultrashallow Junction Formation,“ Electrochem. Solid-State Lett. 9, G354 (2006).
60. D. Pillay and G.S. Hwang#, “O2-Coverage
Dependent CO Oxidation on Reduced TiO2(110): A First Principles
Study,“ J. Chem.
Phys. 125, 144706 (2006).
59. D. Pillay and G.S. Hwang#, “Structure of Small Aun, Agn, and Cun Clusters (n=2-4) on Rutile TiO2(110): A Density Functional Theory Study,” J. Mol. Struct.-THEOCHEM771, 129 (2006) (invited contribution). [PDF]
58. J. Kenney and G.S. Hwang#, “Computational Analysis of Intratool Interactions in Electrochemical Micromachining with Multitip Tool Electrodes,“ Electrochem. Solid-State Lett. 9, D21 (2006). [PDF]
57. J. Kenney and G. S. Hwang#, “Etch trends in electrochemical machining with ultrashort voltage pulses: Prediction from theory and simulation,” Electrochem. Solid-State Lett.9, D1 (2006). [PDF]
2005 (10)
56. S. Harrison, T. Edgar, and G. S. Hwang#, “Structure, Stability, and Diffusion of Arsenic-Silicon Interstitial Pairs,” Appl. Phys. Lett.87, 231905 (2005). [PDF]
55. D. Yu, T.A.
Kirichenko, S. Banerjee, and G. S. Hwang#, “Structure and Diffusion of Excess Si Atoms in SiO2,” Phys. Rev. B 72, 205204 (2005).
54. L.
Lin#, T.
Kirichenko, B. Sahu, G. S. Hwang, and S. Banerjee, “Theoretical study of B
diffusion with charged defects in strained Si,” Phys. Rev. B 72, 205206 (2005).
53. S. Harrison, T. Edgar, and G. S. Hwang#, “Structure and Dynamics of the Diarsenic Complex in Crystalline Silicon,” Phys. Rev. B72, 195414 (2005). [PDF]
52. D. Pillay and G.
S. Hwang#, “Growth and Structure of Small Au particles
on TiO2(110) Rutile,” Phys. Rev. B 72,
205422 (2005).
51. T.
Kirichenko, D. Yu,
50. D.
Pillay, Y. Wang, and G. S. Hwang#, “Growth, Structure, and
Chemistry of 1B Metal Clusters supported on TiO2(110): Atomic Level
Understanding from First Principles Studies,” Catalysis Today 105, 78 (2005). (Invited contribution)
49. J. Kenney and G. S. Hwang#, “Electrochemical machining with
ultrashort voltage pulses: modeling of charging dynamics and feature profile
evolution,” Nanotechnology16, S309 (2005). (Invited contribution)
48. Y. Wang and G. S. Hwang#, “Origin of Non-local Interactions in Adsorption of Polar Molecules on Si(001)-2´1,” J. Chem. Phys. 122, 164706 (2005).
47. Y. Wang and G. S. Hwang#, “P-Assisted Growth of Molecular Wires on Si(001)-2´1,” Appl. Phys. Lett.86, 23108 (2005).
2004 (12)
46. S. Harrison, T. Edgar, and G. S. Hwang#, “Interaction between interstitials and arsenic-vacancy complexes in crystalline silicon,” Appl. Phys. Lett, 85, 4935 (2004).
45. L.
Lin#, T.
Kirichenko, S. Banerjee, and G. S. Hwang, “Boron diffusion in strained Si: A
first principles study,” J. Appl. Phys. 96, 5543 (2004).
44. T.
Kirichenko, S. Banerjee, and G. S. Hwang#, “Surface Chemistry Effects on Vacancy and Interstitial
Annihilation on Si(001),” Phys. Status Solidi B 241, 2303 (2004).
43. S. Harrison, T. Kirichenko, D. Yu, T. Edgar, S. Banerjee, and G. S. Hwang#, “Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface,” J. Appl. Phys. 96, 3334 (2004).
42. Y. Wang, D. Pillay, and G. S. Hwang#, “Dynamics of oxygen species on reduced TiO2(110) rutile,” Phys. Rev. B, 70, 193410 (2004).
41. T.
Kirichenko,
40. J.
Kenney, W. Shin, and G. S. Hwang#, “Two-dimensional
Computational Model for Electrochemical Micromachining with Ultrashort Voltage
Pulses,” Appl.
Phys. Lett. 84, 3774 (2004).
39. Y. Wang, S. Lee, and G. S. Hwang#, “Effect of Subsurface Boron and Phosphorus on the Surface Reactivity of Si(001): Water and Ammonia Adsorption,” J. Phys. Chem. B108, 16147 (2004).
38. T.
Kirichenko,
37. D. Pillay, Y. Wang, and G. S. Hwang#, “A comparative theoretical study of Au, Ag and Cu adsorption on TiO2(110) rutile surfaces,” KJChE 21, 537 (2004) (invited contribution).
36. Y. Wang and G. S. Hwang#, “Two Dimensional Arrangement of CH3NH2 Adsorption on Si(001)-2´1,” Chem. Phys. Lett. 385, 144 (2004).
35. D. Pillay, B. Steward, C. Shin, and G. S. Hwang#, “Revisit to an Ising Model for Order-Disorder Phase Transition on Si(001),” Surf. Sci. 554, 150 (2004).
2003
34. Y. Wang and G. S. Hwang#, “Function of Subsurface Boron on Si (100)-2´1: Water Adsorption,” Surf. Sci. 547, L882 (2003).
33. Y. Wang and G. S. Hwang#, “Adsorption of Au atoms on stoichiometric and reduced TiO2(110) rutile surfaces: a first principles study,” Surf. Sci. 542, 72 (2003).
BEFORE UT-AUSTIN
32. G. S. Hwang and W. A. Goddard III, “Shouldering in B diffusion profiles in Si: Role of di-boron diffusion,” Appl. Phys. Lett. 83, 3501 (2003).
31. G. S. Hwang and W. A. Goddard III, “Catalytic Role of Boron in Self-Interstitial Clustering in Si,” Appl. Phys. Lett,83, 1047 (2003).
30. G. S. Hwang and W. A. Goddard III, “Diffusion of the di-boron pair in silicon,” Phys. Rev. Lett.89, 55901 (2002).
29. G. S. Hwang and W. A. Goddard III, “Diffusion and Dissociation of Neutral Divacancies in Crystalline Silicon,” Phys. Rev. B 65, 233205 (2002).
28. G. S. Hwang and C.-B. Shin, “Dissociative Adsorption of H2 on the H/Si(001) Surface: Effect of Intradimer p–bonding Disruption,” J. Electrochem. Soc. 148, G692 (2001).
27. G. S. Hwang, “A Channel for Dimer Flipping on the Si(100) Surface; A First-principles Study,” Surf. Sci. 465, L789 (2000).
26. K.
P. Giapis, G. S. Hwang, and O.
Joubert, “The role of mask charging in profile evolution and gate oxide
degradation,” Microelectronic
25. K. P. Giapis and G. S. Hwang, “Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging,” Thin Solid Films 374, 175 (2000).
24. G. S. Hwang, C.-B. Shin, S.-W.
23. G. S. Hwang and K. P. Giapis, “Role of Film Conformality in Charging Damage during Plasma-Assisted Interlevel Dielectric Deposition,” J. Vac. Sci. Technol. B 17, 999 (1999).
22. G. S. Hwang and K. P. Giapis, “Pattern-Dependent Charging in Plasmas,” IEEE Trans. Plasma Sci., Special Issue: Images in Plasma Science 27, 102 (1999).
21. G. S. Hwang and K. P. Giapis, “Charging Damage during Residual Metal Overetching,” Appl. Phys. Lett. 74, 932 (1999).
20. G. S. Hwang and K. P. Giapis, “The Influence of Surface Currents on Pattern-Dependent Charging and Notching,” J. Appl. Phys. 84, 683 (1998).
19. G. S. Hwang and K. P. Giapis, “Modeling of Charging Damage during Interlevel Oxide Deposition in High-Density Plasmas,” J. Appl. Phys. 84, 154 (1998).
18. G. S. Hwang and K. P. Giapis, “Mechanism of Charging Reduction in Pulsed Plasma Etching,” Jap. J. Appl. Phys. 37, 2291 (1998).
17. K. P. Giapis and G. S. Hwang, “Pattern-Dependent Charging and the Role of Electron Tunneling,” Jap. J. Appl. Phys. 37, 2281 (1998). (Review paper)
16. G. S. Hwang and K. P. Giapis, “The Role of the Substrate on Pattern-Dependent Charging,” J. Electrochem. Soc. 144, L320 (1997).
15. G. S. Hwang and K. P. Giapis, “On the Origin of Charging Damage during Etching of Antenna Structures,” J. Electrochem. Soc. 144, L285 (1997).
14. G. S. Hwang and K. P. Giapis, “Simulation of Current Transient through Ultrathin Gate Oxides during Plasma Etching,” Appl. Phys. Lett. 71, 1945 (1997).
13. G. S. Hwang and K. P. Giapis, “How Tunneling Currents Reduce Plasma-Induced Charging,” Appl. Phys. Lett. 71, 2928 (1997).
12. G. S. Hwang and K. P. Giapis, “Ion Mass Effect on Plasma-Induced Charging,” Appl. Phys. Lett. 71, 1942 (1997).
11. G. S. Hwang and K. P. Giapis, “On the Link between Electron Shadowing and Charging Damage,” J. Vac. Sci. Technol. B 15, 1839 (1997).
10. G. S. Hwang and K. P. Giapis, “Electron Irradiation of Conductive Sidewall: A Determining Factor for Charging Damage,” J. Vac. Sci. Technol. B 15, 1741 (1997).
9. G. S. Hwang and K. P. Giapis, “Pattern-Dependent Charging in Plasmas: Electron Temperature Effect,” Phys. Rev. Lett. 79, 845 (1997).
8. G. S. Hwang and K. P. Giapis, “Aspect Ratio Independent Etching of Dielectrics,” Appl. Phys. Lett. 71, 458 (1997).
7. G. S. Hwang and K. P. Giapis, “The Influence of Mask Thickness on Charging Damage during Overetching,” J. Appl. Phys. 82, 572 (1997).
6. G. S. Hwang and K. P. Giapis, “Aspect-Ratio-Dependent Charging in High-Density Plasmas,” J. Appl. Phys. 82, 566 (1997).
5. G. S. Hwang and K. P. Giapis, “Prediction of Multiple-Feature Effects in Plasma Etching,” Appl. Phys. Lett. 70, 2377 (1997).
4. G. S. Hwang and K. P. Giapis, “The Influence of Electron Temperature on Pattern-Dependent Charging during Etching in High-Density Plasmas,” J. Appl. Phys. 81, 3433 (1997).
3. G. S. Hwang and K. P. Giapis, “On the Origin of the Notching Effect during Etching in Uniform High Density Plasmas,” J. Vac. Sci. Technol. B 15, 70 (1997).
2. G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, and K. P. Giapis, “Gas-Surface Dynamics and Profile Evolution during Etching of Silicon,” Phys. Rev. Lett. 77, 3049 (1996).
1. C.-B. Shin, K. H. Lee, G. S. Hwang, S. H. Moon, W. I. Cho, and K. S. Yun, “A Study on the Film-Formation Mechanism by Ionized Cluster Beam Deposition,” J. of Korean Ind. & Eng. Chemistry 7, 464 (1996).
Refereed Proceedings: (#
indicates corresponding author)
24. J.
G. Ekerdt#, J. Shin, H. Kim, L.B. Henderson, G. S. Hwang, K. Agapiou. And R. A. Jones, “Chemical Vapor
Deposition of Amorphous Ruthenium-phosphorus Alloy Films for Cu Interconnect
Applications,” 2007 Advanced
Metallization Conference,
23. S.
Lee and G. S. Hwang#, “Structure and Stability of Small
Self-interstitial Clusters in Si: Prediction by First Principles-based Monte
Carlo Simulations,” The Electrochemical
Society,
22. K. E. Kweon, S. A. Harrison and G. S. Hwang#, “Structure and Diffusion of Phosphorous on Monohydride Si(001)-2´1-H,” The Electrochemical Society, Chicago, IL, 2007.
21. N.
Kong, T.A. Kirichenko, G.S. Hwang, M.C.
Foisy, S.G. Anderson, and S.K. Banerjee, “An Experimental and Simulation Study
of Arsenic Diffusion Behavior in Point Defect Engineering Silicon,” Mat. Res. Soc. Sym. Proc.,
20. D.
Yu, S. Lee, and G. S. Hwang#, “Multiscale Modeling of Growth and
Structure of Silicon Nanoparticles in an Oxide Matrix,” Mat. Res. Soc. Sym. Proc.,
19. S.
Lee, D. Yu, and G. S. Hwang#, “Understanding of the Synthesis and
Structure of Si Nanocrystals in an Oxide Matrix from First Principles Based
Atomistic Modeling,” Mat. Res. Soc. Sym.
Proc.,
18. S.
Harrison, T. Edgar, and G. S. Hwang#, “Mechanisms for Interstitial-mediated Transient
Enhanced Diffusion of N-type Dopants,” Mat.
Res. Soc. Sym. Proc.,
17. Y.
Liu#, S. Tang, D. Yu, G. S. Hwang, S. Banerjee, “Tunnel
Oxide Thickness Dependence of Activation Energy for SiGe Quantum Dot Flash
Memory,” 63rd Annual
Device Research Conference,
16. S.
Harrison, T. Edgar, and G. S. Hwang#, “Role of Interstitials in As Transient
Enhanced Diffusion and Clustering in Si,” Mat.
Res. Soc. Sym. Proc.,
15. S.
Harrison, T. Edgar, and G. S. Hwang#, “Diffusion of Fluorine-Silicon
Interstitial Complex in Crystalline Silicon,” Mat. Res. Soc. Sym. Proc.,
14. T.
Kirichenko, D. Yu,
13. J.
Kenney and G. S. Hwang#, “Two Dimensional Computational Model
for Electrochemical Micromachining with Ultrashort Voltage Pulses,” The Electrochemical Society,
12. S.
Harrison, T. Edgar, and G. S. Hwang#, “Interaction between Interstitials and
Arsenic-Vacancy Complexes in Crystalline Silicon,” The Electrochemical Society,
11. T. Kirichenko, D. Yu, S. Banerjee, and G. S. Hwang#, “Structure and Dynamics of Si Interstitials at Si(001) and Si(001)/SiO2,” The Electrochemical Society, San Antonio, TX, 2004.
10. G. S. Hwang and K. P. Giapis, “On the
Dependence of Plasma-Induced Charging Damage on Antenna Area,” Proc. 4th Intern. Symp. on Plasma
Process-Induced Damage (
9. G. S. Hwang, “Pattern-Dependent Charging Damage in High Density Plasmas Processes,” Interface (The Electrochemical Society), Vol 7 (1998).
8. G.
S. Hwang and K.P. Giapis, “Mask Charging Effects on Feature Profile
Evolution during High-Density Plasma Etching,” Proc. Symp. on Plasma Processing XII, edited by G. S. Mathad (The Electrochemical Society,
7. C. B. Shin and G. S. Hwang, “A Main Factor Determining the Uniform Step Coverage in Chemical Vapor Deposition,” Mat. Res. Soc. Sym. Proc. Vol. 514, 369 (1998).
6. G. S. Hwang and K. P. Giapis,
“Mechanism of Charging Damage during Interlevel Oxide Deposition in
High-Density Plasma Tools,” Proc. 3nd Intern. Symp. on Plasma Process-Induced Damage (
5. G. S. Hwang and K. P. Giapis, “The Role
of Electron Tunneling in Pattern-Dependent Charging,” 19th Dry Process Symposium (
4. G.
S. Hwang and K. P. Giapis, “Simulation of Current Transient through
Ultrathin Gate Oxide during Plasma Etching,” 23rd Annual Tegal Plasma Seminar Proceedings (
3. G.
S. Hwang and K. P. Giapis, “On the Link between Electron Shadowing and
Charging Damage,” Proc. 2nd Intern. Symp. on Plasma Process-Induced Damage (
2. C. M. Anderson, G. S. Hwang, M. J. Gordon, and K. P. Giapis, “Profile Evolution during Neutral Beam Etching,” Proc. Symp. on Plasma Processing XI, edited by G. S. Mathad and W. Hess (The Electrochemical Society, Pennington, NJ), Vol 96-12, 357 (1996).
1. G. S. Hwang, C. B. Shin, and S. H. Moon, “Simulation of Film Growth Contour in a Narrow Deep Trench and Film Crystalline in LPCVD Process,” Mat. Res. Soc. Sym. Proc. Vol. 389, 125 (1995).
Patents/Disclosures: (# indicates
corresponding author)
1. “De
Novo Processing of Electronic Materials,” US Patent No.
2. “Method for Predicting the
Behavior of Dopant and Defect Components,” US Patent No. US 7074270 B2, 2006, with S. Yuzuru, U. Masamitsu, and W.
A. Goddard III.
3. “Method for
Predicting the Synthesis, Structure and Properties of Si Nanocrystals Embedded
in Oxide Matrices,” US Patent
(Application No.: US11537423, with D. Yu. (Commercialized by Intellectual
Ventures)
4. “First-principles Model
for Predicting the Evolution of N-type Dopant Concentration and Electrical
Activity Profiles in Ultrashallow Junction Formation,” US Patent (Application No.: US11536740), with S. Harrison. (Commercialized by Intellectual Ventures)
Book Chapters:
1. J. Kenney and G.S. Hwang#, “Basics: Handling Techniques – Etching,“ The Encyclopedia of Electrochemical Power Sources, in press (2008); invited.
2 G.S. Hwang#, “Minireviews: Dynamics and Reactivity of Molecular Oxygen on Oxide Materials,” ChemPhysChem, in preparation; invited.
TECHNICAL PRESENTATIONS:
Selected Invited Seminars and Tutorials
(From a total of 65):
§
G. S.
Hwang, “Atomic Arrangement and
Catalytic Activity of Au-Pt Au-Pd Alloy Surfaces: A Combined Quantum Mechanical
and Monte Carlo Study,” American Chemical Society 239th National Meeting,
§
G. S.
Hwang, “First Principles-based
Atomistic Modeling in Hydrogen Fuel Cell Technologies: Promises and Challenges,”
28th ULTRA Workshop,
§
G. S.
Hwang, “Silicon Nanocrystals,
Nanowires and Extended Defects: Understanding Their Growth Mechanisms through
First Principles-based Atomistic Modeling,” Department of Chemical and Biological
Engineering,
§
G. S.
Hwang, “Silicon Nanocrystals,
Nanowires and Extended Defects: Understanding Their Growth Mechanisms through
First Principles-based Atomistic Modeling,” Department of Chemical and
Biomolecular Engineering, University of
§
G. S.
Hwang, “Silicon Nanocrystals,
Nanowires and Extended Defects: Understanding Their Growth Mechanisms through
First Principles-based Atomistic Modeling,” Department of Chemical Engineering,
§ G. S. Hwang, “First Principles-based Atomistic Modeling for the Synthesis and Structure of Silicon Nanocrystals Embedded in Silica,” 2008 Materials Research Society Fall Meeting, Boston, Massachusetts, December 1-5, 2008.
§ G. S. Hwang, “Understanding Oxide-embedded Silicon Nanocrystal Synthesis and Structure through First Principles-based Atomistic Modeling,” 5th International Conference on Advanced Materials and Processing, Harbin, China, September 2-5, 2008.
§
G. S.
Hwang, “Computational
Nanoengineering: Challenges and Opportunities,”
§ G. S. Hwang, “Understanding the formation and nature of point-like defects in amorphous silica and their role in electronic device fabrication,” SEMATECH, Austin, August 5, 2008.
§
G. S.
Hwang, “First Principles-based
Multiscale Modeling for Atomic-level Control of Doping for Nanoelectronics,”
Samsung Electronics Corp.,
§
G. S.
Hwang, “Understanding the formation and nature of point-like defects in amorphous silica and their role in electronic device fabrication,” Tokyo Electron Ltd,
§ G. S. Hwang, “Atomic-level Control of Chemical Doping for Nanoelectronics through First Principles Modeling,” 2007 American Chemical Society 234th National Meeting, Boston, Massachusetts, August 19-23, 2007.
§
G. S.
Hwang, “Chemical Doping for Nanoelectronics: Atomic Level Understanding
from First Principles Studies,” China/USA/Japan Joint Chemical Engineering
Conference,
§
G. S.
Hwang, “Computational Nanoengineering: On the Origin of Si Nanocrystal
Formation in a Si Suboxide Matrix,” 5th Congress of the
International Society for Theoretical Chemical Physics,
§
G. S.
Hwang, “Growth, Structure, and Reactivity of 1B Nanoclusters Supported on
Rutile TiO2(110): Atomic Level Understanding from First Principles
Studies,” 2005 American Chemical Society 229th National Meeting,
§
G. S.
Hwang, “Atomic Level Control of Growth and Catalytic Properties of 1B
Nanoparticles on Rutile TiO2(110),” 7th Congress of the
World Association of Theoretically Oriented Chemists: Modeling Structure and
Reactivity,
§
G. S.
Hwang, “Predictive Multiscale, Multiphysics Computational Model for the
Synthesis, Structure, and Properties of Nanosystems,” National Academies Keck
Futures Initiative Conference,