RESEARCH AREAS:

SPONSORED PROJECTS (CURRENT & PAST):

A.   National Science Foundation:

  • Tailoring the Surface Reactivity of Amorphous Silica Materials through First Principles-based Atomistic Modeling (sole PI)
  • CAREER: Multiscale,Multiphysics Modeling of Synthesis, Manipulation and Characterization of Si-Ge-Insulator Nanosystems (sole PI)
  • SGER: Exploratory Theoretical Study of Differential Surface Charging of Nanopatterned Dielectric Materials (sole PI)
  • NIRT: Spatially Ordered Self-Assembled Quantum Dot Gate Low Voltage/Power, High Speed Nanoscale Flash Memories (co-PI)

B.      Department of Energy:

  • SISGR: Improved electrical energy storage with electrochemical double layer capacitance based on novel carbon electrodes, new electrolytes, and through development of a strong science base (co-PI)

C.      Welch Foundation:

  • First-principles Investigations of Alloying Effects in Oxide-supported Bimetallic Nanocatalysts (sole PI)
  • Growth, Structure, and Reactivity of Oxide Supported Metal Nanoclusters (sole PI)
  • Self-Assembly of Molecular Nanostructures on Group IV Semiconductors (single PI)

D.     Semiconductor Research Corporation:

  • Experimental and Modeling Study of Ultrathin Film Growth and Interface Formation for Cu Barriers (co-PI)
  • Multiscale Modeling of Dopant Profiles with Improved Defect-Dopant Dynamics Models
  • Growth, Modeling and Properties of Ultra Thin Films for Metal Barriers (co-PI)
  • Atomistic Modeling of Oxide-embedded Si Nanocrystal Synthesis for Silicon Microphotonics (sole PI)

E.      International SEMATECH:

  • Ab Initio Modeling of Implant and Diffusion in Si-Ge-C and SOI MOSFETs with High-K Gate Dielectrics (PI)

F.      Korea Institute of Science and Technology:

  • Rational Design and Development of Novel Bimetallic Electrocatalysts for Fuel Cell Applications through First Principles–based Atomistic Modeling (sole PI)
  • Catalyst Design for Direct Liquid Fuel Cells Using Atomic-level Simulations (sole PI)

G.     Tokyo Electron Ltd:

  • First Principles-based Atomistic Modeling of Controlled Plasma-Assisted Oxidation of Tubular Silicon Nanostructures (sole PI)
  • First Principles-based Atomistic Modeling of Oxide Nitridation (sole PI)

H.     Samsung Advanced Institute of Technology :

  • Rational Design of Non-Platinum Bimetallic Nanocatalysts for Oxygen Reduction through First Principles-based Atomistic Modeling (sole PI) 

I.        University of Texas at Austin :

  • SRG: Development of First Principles-based Force Fields for Ionic Liquid Electrolytes with Applications to Electrochemical Energy Storage (sole PI)
  • SRG: First Principles-based Atomistic Modeling of Defect Engineering in Amorphous Silica Materials (sole PI)
  • RG: Rational Design of Oxide Supported Bimetallic Nanocatalysts through First Principles based Molecular Modeling (sole PI)
  • SRG: Development of a computational tool to simulate amorphous Si-O systems based on reactive force fields (sole PI)
  • SRA: Multiscale Modeling of Nanostructuring of Semiconductors (sole PI)
  • RG: Multiscale Computer Simulation of Nanoscale Structuring on Semiconductors by Low-Energy-Ion Beams (sole PI)

STUDENT FELLOWSHIPS:

  • National Science Foundation Graduate Fellowship (S. Harrison) 
  • University Continuing Fellowship (S. Harrison)  
  • F. M. Becket Summer Fellowship, The Electrochemical Society (S. Harrison) 
  • University Continuing Fellowship (D. Pillay) 
  • KCC Corp. Graduate Support (H. Kim)                                                   
  • Applied Materials Graduate Fellowship ( E. Paek )
  • Houston Endowment Excellence Fellowship (S. Lee)
  • IGERT Trainee Fellowship (J. Stephens)                            
  • Donald D. Harrington Dissertation Fellowship (S. Lee)